Stable Al2O3 encapsulation of MoS2-FETs enabled by CVD grown h-BN”
A. Piacentini, D. Marian, D. S. Schneider, E. González Marín, Z. Wang, M. Otto, B. Canto, A. Radenovic, A. Kis, G. Fiori, M. C. Lemme, and D. Neumaier
Adv. Electron. Mater. 2022, 2200123.

“Inkjet-printed low-dimensional materials-based complementary electronic circuits on paper”
Irene Brunetti, Lorenzo Pimpolari, Silvia Conti, Robyn Worsley, Subimal Majee, Dmitry K. Polyushkin, Matthias Paur, Elisabetta Dimaggio, Giovanni Pennelli, Giuseppe Iannaccone, Massimo Macucci, Francesco Pieri, Thomas Mueller, Cinzia Casiraghi and Gianluca Fiori,
 2D Materials and Applications 5, 85 (2021) . 

A SPICE Compact Model for Ambipolar 2-D-Material FETs Aiming at Circuit Design“, Sheikh Aamir Ahsan, Shivendra Kumar Singh, Mehak Ashraf Mir, Marta Perucchini, Dmitry K. Polyushkin, Thomas Mueller, Gianluca Fiori, and Enrique G. Marín, 
IEEE Transactions on Electron Devices 68, 3096 (2021).

Plasma-enhanced atomic layer deposition of Al2O3 on graphene using monolayer hBN as interfacial layer
Bárbara Canto, Martin Otto, Michael J. Powell, Vitaliy Babenko, Aileen O’Mahony, Harm C. M. Knoops, Ravi S. Sundaram, Stephan Hofmann, Max C. Lemme, Daniel Neumaier
Advanced Materials Technologies 6, 2100489 (2021).

Sub-Maxwellian Source Injection and Negative Differential Transconductance in Decorated Graphene Nanoribbons“, Damiano Marian, Enrique G. Marin, Giuseppe Iannaccone, and Gianluca Fiori 
Physical Review Applied 14, 064019 (2020).

“Analogue two-dimensional semiconductor electronics”
Dmitry K. Polyushkin Stefan Wachter, Lukas Mennel, Maksym Paliy, Giuseppe Iannaccone, Gianluca Fiori, Daniel Neumaier, Barbara Canto and Thomas Mueller, Nature Electronics 3, 486 (2020).